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MRF6S21100HR3 Datasheet

  • MRF6S21100HR3

  • RF Power Field Effect Transistors N-Channel Enhancement-Mode...

  • 12頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
MRF6S21100H
Rev. 2, 12/2004
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
鈥?/div>
Typical 2 - carrier W - CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 950 mA, P
out
= 23 Watts Avg., Full Frequency Band, Channel Band-
width = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?15.9 dB
Drain Efficiency 鈥?27.6%
IM3 @ 10 MHz Offset 鈥?- 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset 鈥?- 39.5 dBc @ 3.84 MHz Channel Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
Lower Thermal Resistance Package
鈥?/div>
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
鈥?/div>
Low Gold Plating Thickness on Leads, 40
碌
鈥?/div>
Nominal.
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S21100HR3
MRF6S21100HSR3
2170 MHz, 23 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S21100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S21100HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, +12
388
2.2
- 65 to +150
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 100 W CW
Case Temperature 77擄C, 23 W CW
Symbol
R
胃JC
Value
(1)
0.45
0.52
Unit
擄C/W
1. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2004. All rights reserved.
MRF6S21100HR3 MRF6S21100HSR3
1
RF Device Data
Freescale Semiconductor

MRF6S21100HR3 產(chǎn)品屬性

  • 250

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 2.11GHz

  • 15.9dB

  • 28V

  • 10µA

  • -

  • 950mA

  • 23W

  • 68V

  • NI-780

  • NI-780

  • 帶卷 (TR)

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