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MRF6S18100NBR1 Datasheet

  • MRF6S18100NBR1

  • RF Power Field Effect Transistors

  • 20頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF6S18100N
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d
multicarrier amplifier applications.
GSM Application
鈥?/div>
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 900 mA, P
out
=
100 Watts, Full Frequency Band (1805 - 1880 MHz or 1930- 1990 MHz)
Power Gain 鈥?14.5 dB
Drain Efficiency 鈥?49%
GSM EDGE Application
鈥?/div>
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 700 mA,
P
out
= 40 Watts Avg., Full Frequency Band (1805 - 1880 MHz or
1930- 1990 MHz)
Power Gain 鈥?15 dB
Drain Efficiency 鈥?35%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 76 dBc
EVM 鈥?2% rms
鈥?/div>
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW
Output Power
Features
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
鈥?/div>
200擄C Capable Plastic Package
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S18100NR1
MRF6S18100NBR1
1805- 1990 MHz, 100 W, 28 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
MRF6S18100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
MRF6S18100NBR1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, +12
343
1.96
- 65 to +175
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 100 CW
Case Temperature 77擄C, 40 CW
Symbol
R
胃JC
Value
(1,2)
0.51
0.62
Unit
擄C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S18100NR1 MRF6S18100NBR1
1
RF Device Data
Freescale Semiconductor

MRF6S18100NBR1 PDF文件相關(guān)型號(hào)

MRF6S19100H

MRF6S18100NBR1 產(chǎn)品屬性

  • RF Devices Discontinuation 01/Jul/2010

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 1.99GHz

  • 14.5dB

  • 28V

  • 10µA

  • -

  • 900mA

  • 100W

  • 68V

  • TO-272BB

  • TO-272 WB-4

  • 帶卷 (TR)

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