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MRF6P3300HR5 Datasheet

  • MRF6P3300HR5

  • RF Power Field Effect Transistor (N-Channel Enhancement-Mode...

  • 24頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF6P3300H
Rev. 0, 9/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of this device make it ideal for large - signal, common - source amplifier
applications in 32 volt analog or digital television transmitter equipment.
鈥?/div>
Typical Narrowband Two - Tone Performance @ 860 MHz: V
DD
= 32 Volts,
I
DQ
= 1600 mA, P
out
= 270 Watts PEP
Power Gain 鈥?20.2 dB
Drain Efficiency 鈥?44.1%
IMD 鈥?- 30.8 dBc
鈥?/div>
Typical Narrowband DVBT OFDM Performance @ 860 MHz: V
DD
=
32 Volts, I
DQ
= 1600 mA, P
out
= 60 Watts Avg., 8K Mode, 64 QAM
Power Gain 鈥?20.4 dB
Drain Efficiency 鈥?29%
ACPR @ 3.9 MHz Offset 鈥?- 57 dBc @ 20 kHz Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Designed for Push - Pull Operation Only
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
Lower Thermal Resistance Package
鈥?/div>
Low Gold Plating Thickness on Leads, 40
碌
鈥?/div>
Nominal.
鈥?/div>
Pb - Free and RoHS Compliant
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
MRF6P3300HR3
MRF6P3300HR5
470 - 860 MHz, 300 W, 32 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375G - 04, STYLE 1
NI - 860C3
Value
- 0.5, +68
- 0.5, +12
761
4.3
- 65 to +150
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 300 W CW
Case Temperature 82擄C, 220 W CW
Case Temperature 79擄C, 100 W CW
Case Temperature 81擄C, 60 W CW
Symbol
R
胃JC
Value
(1,2)
0.23
0.24
0.27
0.27
Unit
擄C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF6P3300HR3 MRF6P3300HR5
1
RF Device Data
Freescale Semiconductor

MRF6P3300HR5 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 857MHz

  • 20.2dB

  • 32V

  • 10µA

  • -

  • 1.6A

  • 320W

  • 68V

  • NI-860C3

  • NI-860C3

  • 帶卷 (TR)

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