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MRF5S9101MR1 Datasheet

  • MRF5S9101MR1

  • RF Power Field Effect Transistors

  • 16頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF5S9101
Rev. 2, 7/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier
applications.
GSM Application
鈥?/div>
Typical GSM Performance: V
DD
= 26 Volts, I
DQ
= 700 mA, P
out
=
100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz)
Power Gain - 17.5 dB
Drain Efficiency - 60%
GSM EDGE Application
鈥?/div>
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 650 mA, P
out
=
50 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 - 960 MHz)
Power Gain 鈥?18 dB
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM 鈥?2.3% rms
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc, @ 100 W CW Output Power,
@ f = 960 MHz
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
N Suffix Indicates Lead - Free Terminations
鈥?/div>
200擄C Capable Plastic Package
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5S9101NR1
MRF5S9101NBR1
MRF5S9101MR1
MRF5S9101MBR1
869 - 960 MHz, 100 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S9101NR1(MR1)
CASE 1484 - 02, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S9101NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, +15
427
2.44
- 65 to +150
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 100 W CW
Case Temperature 80擄C, 50 W CW
Symbol
R
胃JC
Value
(1,2)
0.41
0.47
Unit
擄C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1
1
RF Device Data
Freescale Semiconductor

MRF5S9101MR1 產(chǎn)品屬性

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 960MHz

  • 17.5dB

  • 26V

  • 10µA

  • -

  • 700mA

  • 100W

  • 68V

  • TO-270AB

  • TO-270 WB-4

  • 帶卷 (TR)

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