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MRF5S9100NR1 Datasheet

  • MRF5S9100NR1

  • N-Channel Enhancement-Mode Lateral MOSFETs

  • 12頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF5S9100
Rev. 3, 7/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
鈥?/div>
Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
DD
= 26 Volts,
I
DQ
= 950 mA, P
out
= 20 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?19.5 dB
Drain Efficiency 鈥?28%
ACPR @ 750 kHz Offset 鈥?- 46.8 dBc @ 30 kHz Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
N Suffix Indicates Lead - Free Terminations
鈥?/div>
200擄C Capable Plastic Package
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5S9100NR1
MRF5S9100NBR1
MRF5S9100MR1
MRF5S9100MBR1
880 MHz, 20 W AVG., 26 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S9100NR1(MR1)
CASE 1484 - 02, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S9100NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, + 15
336
1.92
- 65 to +150
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 20 W CW
Symbol
R
胃JC
Value
(1,2)
0.52
Unit
擄C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1
1
RF Device Data
Freescale Semiconductor

MRF5S9100NR1 產(chǎn)品屬性

  • RF Devices Discontinuation 28/Jun/2011

  • 500

  • 分離式半導體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 880MHz

  • 19.5dB

  • 26V

  • 10µA

  • -

  • 950mA

  • 20W

  • 68V

  • TO-270AB

  • TO-270 WB-4

  • 帶卷 (TR)

  • MRF5S9100NR1TR

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