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MRF5S19150SR3 Datasheet

  • MRF5S19150SR3

  • RF Power Field Effect Transistors

  • 12頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF5S19150/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors MRF5S19150R3
N - Channel Enhancement - Mode Lateral MOSFETs
MRF5S19150SR3
Designed for PCN and PCS base station applications at frequencies from
1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier
applications.
鈥?/div>
Typical 2 - Carrier N - CDMA Performance for V
DD
= 28 Volts,
P
out
= 32 Watts, I
DQ
= 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power 鈥?32 Watts Avg.
Power Gain 鈥?14 dB
Efficiency 鈥?26%
ACPR 鈥?- 50 dB
IM3 鈥?- 36.5 dBc
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
100 Watts CW Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Qualified Up to a Maximum of 32 V Operation
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1990 MHz, 32 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19150R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19150SR3
MAXIMUM RATINGS
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
65
- 0.5, +15
357
2
- 65 to +150
200
100
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
Watts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 100 W CW
Case Temperature 80擄C, 32 W CW
Symbol
R
胃JC
Value (1,2)
0.49
0.53
Unit
擄C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5S19150R3 MRF5S19150SR3
1

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