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MRF5S19060NBR1 Datasheet

  • MRF5S19060NBR1

  • RF Power Field Effect Transistors

  • 12頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF5S19060N
Rev. 6, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 1930 to 1990 MHz. The high gain and broadband
performance of these devices make them ideal for large - signal, common -
source amplifier applications in 28 Volt base station equipment.
鈥?/div>
Typical 2 - carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 750 mA,
P
out
= 12 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?14 dB
Drain Efficiency 鈥?23%
IM3 @ 2.5 MHz Offset 鈥?- 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset 鈥?- 51 dBc in 30 kHz Channel Bandwidth
鈥?/div>
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 12 Watts CW
Output Power
Features
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Integrated ESD Protection
鈥?/div>
200擄C Capable Plastic Package
鈥?/div>
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5S19060NR1
MRF5S19060NBR1
1930 - 1990 MHz, 12 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S19060NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S19060NBR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +65
- 0.5, +15
218.8
1.25
- 65 to +175
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75擄C, 12 W CW
Symbol
R
胃JC
Value
(1,2)
0.80
Unit
擄C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S19060NR1 MRF5S19060NBR1
1
RF Device Data
Freescale Semiconductor

MRF5S19060NBR1 產(chǎn)品屬性

  • RF Devices Discontinuation 01/Jul/2010

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 1.99GHz

  • 14dB

  • 28V

  • 10µA

  • -

  • 750mA

  • 12W

  • 65V

  • TO-272BB

  • TO-272 WB-4

  • 帶卷 (TR)

  • MRF5S19060NBR1TR

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