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MRF5P20180R6 Datasheet

  • MRF5P20180R6

  • RF POWER FIELD EFFECT TRANSISTOR

  • 8頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF5P20180/D
The RF Sub鈥揗icron MOSFET Line
RF Power Field Effect Transistor
Designed for W鈥揅DMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN鈥揚(yáng)CS/cellular radio and WLL applications.
鈥?/div>
Typical 2鈥揷arrier W鈥揅DMA Performance for V
DD
= 28 Volts,
I
DQ
= 2 x 800 mA, f1 = 1955 MHz, f2 = 1965 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 鈥?5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 鈥?10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Output Power 鈥?38 Watts Avg.
Power Gain 鈥?14 dB
Efficiency 鈥?26%
IM3 鈥?鈥?7.5 dBc
ACPR 鈥?鈥?1 dBc
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFET
MRF5P20180R6
1990 MHz, 38 W AVG.,
2 x W鈥揅DMA, 28 V
LATERAL N鈥揅HANNEL
RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 375D鈥?4, STYLE 1
NI鈥?230
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
65
鈥?.5, +15
407
2.3
鈥?5 to +150
200
120
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
Watts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 120 W CW
Case Temperature 80擄C, 38 W CW
Symbol
R
胃JC
Max
0.43
0.43
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
錚?/div>
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5P20180R6
1

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