Specified 28 Volt, 30 MHz Characteristics 鈥?/div>
Output Power = 80 W (PEP)
Minimum Gain = 15 dB
Efficiency = 40%
Intermodulation Distortion = 鈥?2 dB (Max)
MATCHING PROCEDURE
In the push鈥損ull circuit configuration it is preferred that the transistors are
used as matched pairs to obtain optimum performance.
The matching procedure used by Motorola consists of measuring hFE at the
data sheet conditions and color coding the device to predetermined hFE ranges
within the normal hFE limits. A color dot is added to the marking on top of the
cap. Any two devices with the same color dot can be paired together to form a
matched set of units.
MRF464
80 W (PEP), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Characteristic
Thermal Resistance, Junction to Case
Stud Torque (1)
Value
35
65
4.0
10
250
1.4
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
Symbol
R
胃JC
鈥?/div>
Max
0.7
8.5
Unit
擄C/W
In. Lb.
CASE 211鈥?1, STYLE 1
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 100 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 28 Vdc, VBE = 0, TC = + 55擄C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
35
65
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 5.0 Vdc)
NOTE:
1. Case 145A鈥?0 鈥?For Repeated Assembly Use 11 In. Lb.
hFE
10
鈥?/div>
鈥?/div>
(continued)
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF464
1
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