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MRF377R3 Datasheet

  • MRF377R3

  • RF POWER FIELD EFFECT TRANSISTOR

  • 12頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF377/D
The RF MOSFET Line
RF Power Field-Effect Transistor
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large鈥搒ignal, common source amplifier applications in 32
volt digital television transmitter equipment.
鈥?/div>
Typical Broadband DVBT OFDM Performance @ 470鈥?60 MHz, 32 Volts,
I
DQ
= 2.0 A, 8K Mode, 64 QAM
Output Power 鈥?45 Watts Avg.
Power Gain
鈮?/div>
16.7 dB
Efficiency
鈮?/div>
21%
ACPR
鈮?/div>
鈥?8 dBc
鈥?/div>
Typical Broadband ATSC 8VSB Performance @ 470鈥?60 MHz, 32 Volts,
I
DQ
= 2.0 A
Output Power 鈥?80 Watts Avg.
Power Gain
鈮?/div>
16.5 dB
Efficiency
鈮?/div>
27.5%
IMD
鈮?/div>
鈥?1.3 dBc
鈥?/div>
Internally Input and Output Matched for Ease of Use
鈥?/div>
Integrated ESD Protection
鈥?/div>
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT
OFDM Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
(1)
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFET
MRF377
MRF377R3
MRF377R5
470 鈥?860 MHz, 240 W, 32 V
LATERAL N鈥揅HANNEL
RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 375G鈥?4, STYLE 1
NI鈥?60C3
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
65
鈥?0.5, +15
17
486
2.78
鈥?65 to +150
200
Unit
Vdc
Vdc
Adc
W
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.36
Unit
擄C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
(1) Each side of device measured separately.
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Class
1 (Minimum)
M3 (Minimum)
7 (Minimum)
REV 0
MOTOROLA RF
錚?/div>
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF377 MRF377R3 MRF377R5
1

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