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MRF373ALSR1 Datasheet

  • MRF373ALSR1

  • RF Power Field Effect Transistors

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF373A/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
鈥?/div>
Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power 鈥?75 Watts
Power Gain 鈥?18.2 dB
Efficiency 鈥?60%
鈥?/div>
100% Tested for Load Mismatch Stress at All Phase Angles
with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW
鈥?/div>
Integrated ESD Protection
D
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large - Signal
Impedance Parameters
鈥?/div>
In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
鈥?/div>
Low Gold Plating Thickness on Leads.
L Suffix Indicates 40碌鈥?Nominal.
G
N - Channel Enhancement - Mode Lateral MOSFETs
MRF373ALR1
MRF373ALSR1
470 - 860 MHz, 75 W, 32 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 360B - 05, STYLE 1
NI - 360
MRF373ALR1
S
CASE 360C - 05, STYLE 1
NI - 360S
MRF373ALSR1
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
MRF373ALR1
MRF373ALSR1
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
Characteristic
Thermal Resistance, Junction to Case
MRF373ALR1
MRF373ALSR1
Symbol
R
胃JC
Symbol
V
DSS
V
GS
P
D
Value
70
- 0.5, +15
197
1.12
278
1.59
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Max
0.89
0.63
Unit
擄C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
MRF373ALR1
MRF373ALSR1
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA RF
錚?/div>
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF373ALR1 MRF373ALSR1
1

MRF373ALSR1 產(chǎn)品屬性

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 860MHz

  • 18.2dB

  • 32V

  • 1µA

  • -

  • 200mA

  • 75W

  • 70V

  • NI-360S

  • NI-360 短引線

  • 帶卷 (TR)

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