鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
MAXIMUM RATINGS
(1)
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
MRF372
470 鈥?860 MHz, 180 W, 32 V
LATERAL N鈥揅HANNEL
RF POWER MOSFET
CASE 375G鈥?4, STYLE 1
NI鈥?60C3
Value
68
鈥?0.5, +15
17
350
2.0
鈥?65 to +150
200
Unit
Vdc
Vdc
Adc
W
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Each side of device measured separately.
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Symbol
R
胃JC
Max
0.5
Unit
擄C/W
REV 5
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF372
1
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