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MRF284S Datasheet

  • MRF284S

  • RF Power Field-Effect Transistors

  • 12頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF284/D
The RF Sub鈥揗icron MOSFET Line
RF Power Field Effect Transistors
Designed for PCN and PCS base station applications at frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in class A and class AB for PCN鈥揚(yáng)CS/cellular radio
and wireless local loop.
鈥?/div>
Specified Two鈥揟one Performance @ 2000 MHz, 26 Volts
Output Power = 30 Watts (PEP)
Power Gain = 9 dB
Efficiency = 30%
Intermodulation Distortion = 鈥?9 dBc
鈥?/div>
Typical Single鈥揟one Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts (CW)
Power Gain = 9.5 dB
Efficiency = 45%
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
S鈥揚(yáng)arameter Characterization at High Bias Levels
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW)
Output Power
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
MRF284
MRF284S
30 W, 2000 MHz, 26 V
LATERAL N鈥揅HANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B鈥?1, STYLE 1
(MRF284)
CASE 360C鈥?3, STYLE 1
(MRF284S)
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
鹵
20
87.5
0.5
鈥?65 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
2.0
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain鈥揝ource Breakdown Voltage
(VGS = 0, ID = 10
碌A(chǔ)dc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0)
Gate鈥揝ource Leakage Current
(VGS = 20 Vdc, VDS = 0)
V(BR)DSS
IDSS
IGSS
65
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
10
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
Symbol
Min
Typ
Max
Unit
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA RF
漏
Motorola, Inc. 1997
DEVICE DATA
MRF284 MRF284S
1

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