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MRF282Z Datasheet

  • MRF282Z

  • LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

  • 11頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF282/D
The RF Sub鈥揗icron MOSFET Line
RF Power Field Effect Transistors
Designed for class A and class AB PCN and PCS base station applications at
frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier
amplifier applications.
鈥?/div>
Specified Two鈥揟one Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts (PEP)
Power Gain = 11 dB
Efficiency = 30%
Intermodulation Distortion = 鈥?0 dBc
鈥?/div>
Specified Single鈥揟one Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts (CW)
Power Gain = 11 dB
Efficiency = 40%
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal
Impedance Parameters
鈥?/div>
S鈥揚arameter Characterization at High Bias Levels
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts (CW) Output Power
鈥?/div>
Gold Metallization for Improved Reliability
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
MRF282S
MRF282Z
10 W, 2000 MHz, 26 V
LATERAL N鈥揅HANNEL
BROADBAND
RF POWER MOSFETs
CASE 458鈥?3, STYLE 1
(MRF282S)
CASE 458A鈥?1, STYLE 1
(MRF282Z)
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
鹵
20
60
0.34
鈥?65 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
2.9
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain鈥揝ource Breakdown Voltage
(VGS = 0, ID = 10
碌A(chǔ)dc)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
Gate鈥揝ource Leakage Current
(VGS = 20 Vdc, VDS = 0)
V(BR)DSS
IDSS
IGSS
65
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
1.0
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
Symbol
Min
Typ
Max
Unit
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
漏
Motorola, Inc. 1997
DEVICE DATA
MRF282S MRF282Z
1

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