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MRF281ZR1 Datasheet

  • MRF281ZR1

  • RF POWER FIELD EFFECT TRANSISTORS

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF281/D
The RF Sub鈥揗icron MOSFET Line
RF Power Field Effect Transistors
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
Designed for digital and analog cellular PCN and PCS base station
applications with frequencies from 1000 to 2500 MHz. Characterized for
operation Class A and Class AB at 26 volts in commercial and industrial
applications.
鈥?/div>
Specified Two鈥揟one Performance @ 1930 and 2000 MHz, 26 Volts
Output Power 鈥?4 Watts PEP
Power Gain 鈥?11 dB
Efficiency 鈥?30%
Intermodulation Distortion 鈥?鈥?9 dBc
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 4 Watts CW Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
S鈥揚arameter Characterization at High Bias Levels
鈥?/div>
Available in Tape and Reel. R1 Suffix = 500 Units per
12 mm, 7 inch Reel.
MRF281SR1
MRF281ZR1
2000 MHz, 4 W, 26 V
LATERAL N鈥揅HANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B鈥?3, STYLE 1
(NI鈥?00S)
(MRF281SR1)
CASE 458C鈥?3, STYLE 1
(NI鈥?00Z)
(MRF281ZR1)
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
鹵20
20
0.115
鈥?5 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
5.74
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25擄C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain鈥揝ource Breakdown Voltage
(V
GS
= 0, I
D
= 10
碌A(chǔ)dc)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0)
Gate鈥揝ource Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0)
V
(BR)DSS
I
DSS
I
GSS
65
鈥?/div>
鈥?/div>
74
鈥?/div>
鈥?/div>
鈥?/div>
10
1
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
Symbol
Min
Typ
Max
Unit
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF281SR1 MRF281ZR1
1

MRF281ZR1 產(chǎn)品屬性

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 1.93GHz

  • 12.5dB

  • 26V

  • 10µA

  • -

  • 25mA

  • 4W

  • 65V

  • NI-200Z

  • NI-200Z

  • 帶卷 (TR)

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