MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF21125/D
The RF Sub鈥揗icron MOSFET Line
RF Power Field Effect Transistors
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
Designed for W鈥揅DMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N 鈥?P C S / c e l l u l a r r a d i o a n d W L L
applications.
鈥?/div>
Typical 2鈥揷arrier W鈥揅DMA Performance for V
DD
= 28 Volts, I
DQ
= 1600
mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,
adjacent channels at
鹵
5 MHz , ACPR and IM3 measured in 3.84 MHz
bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Output Power 鈥?20 Watts
Efficiency 鈥?18%
Gain 鈥?13 dB
IM3 鈥?鈥?3 dBc
ACPR 鈥?鈥?5 dBc
鈥?/div>
100% Tested under 2鈥揷arrier W鈥揅DMA
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW)
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF21125
MRF21125S
MRF21125SR3
2170 MHz, 125 W, 28 V
LATERAL N鈥揅HANNEL
RF POWER MOSFETs
CASE 465B鈥?3, STYLE 1
(NI鈥?80)
(MRF21125)
CASE 465C鈥?2, STYLE 1
(NI鈥?80S)
(MRF21125S)
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
+15, 鈥?.5
330
1.89
鈥?5 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.53
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF21125 MRF21125S MRF21125SR3
1
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