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MRF21030SR3 Datasheet

  • MRF21030SR3

  • RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE...

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF21030/D
The RF MOSFET Line
RF Power Field Effect Transistors
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN鈥揚(yáng)CS/cellular radio and WLL
applications.
鈥?/div>
Wideband CDMA Performance: 鈥?5 dB ACPR @ 4.096 MHz, 28 Volts
Output Power 鈥?3.5 Watts
Power Gain 鈥?14 dB
Efficiency 鈥?15%
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF21030R3
MRF21030SR3
2.2 GHz, 30 W, 28 V
LATERAL N鈥揅HANNEL
RF POWER MOSFETs
CASE 465E鈥?3, STYLE 1
NI鈥?00
MRF21030R3
CASE 465F鈥?3, STYLE 1
NI鈥?00S
MRF21030SR3
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
鈥?.5, +15
83.3
0.48
鈥?5 to +200
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
2.1
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF21030R3 MRF21030SR3
1

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