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MRF21010LR1 Datasheet

  • MRF21010LR1

  • RF Power Field Effect Transistors N-Channel Enhancement-Mode...

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF21010/D
The RF MOSFET Line
MRF21010LR1
RF Power Field Effect Transistors MRF21010LSR1
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
鈥?/div>
Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts,
5 MHz Offset/4.096 MHz BW, 15 DTCH
Output Power 鈥?2.1 Watts
Power Gain 鈥?13.5 dB
Efficiency 鈥?21%
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz,
10 Watts CW Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
鈥?/div>
Low Gold Plating Thickness on Leads. L Suffix Indicates 40碌鈥?Nominal.
2170 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 360B - 05, STYLE 1
NI - 360
MRF21010LR1
CASE 360C - 05, STYLE 1
NI - 360S
MRF21010LSR1
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
65
- 0.5, +15
43.75
0.25
- 65 to +150
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Max
5.5
Unit
擄C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 7
MOTOROLA RF
錚?/div>
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21010LR1 MRF21010LSR1
1

MRF21010LR1 產(chǎn)品屬性

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 2.11GHz

  • 13.5dB

  • 28V

  • 10µA

  • -

  • 100mA

  • 11W

  • 65V

  • NI-360

  • NI-360

  • 帶卷 (TR)

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