MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF19125/D
The RF Sub鈥揗icron MOSFET Line
RF Power Field Effect Transistors
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
鈥?/div>
Typical 2鈥揅arrier N鈥揅DMA Performance for V
DD
= 26 Volts,
I
DQ
= 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS鈥?5 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 鈥?85 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 鈥?.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power 鈥?24 Watts Avg.
Power Gain 鈥?13.6 dB
Efficiency 鈥?22%
ACPR 鈥?/div>
鈥?1 dB
IM3 鈥?/div>
鈥?7.0 dBc
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 125 Watts (CW)
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch
Reel.
MRF19125
MRF19125S
MRF19125SR3
1990 MHz, 125 W, 26 V
LATERAL N鈥揅HANNEL
RF POWER MOSFETs
CASE 465B鈥?3, STYLE 1
(NI鈥?80)
(MRF19125)
CASE 465C鈥?2, STYLE 1
(NI鈥?80S)
(MRF19125S)
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
+15, 鈥?.5
330
1.89
鈥?5 to +200
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.53
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF19125 MRF19125S MRF19125SR3
1
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