MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19120/D
The RF Sub鈥揗icron MOSFET Line
RF Power Field Effect Transistors
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN鈥揚CS/cellular radio and WLL applications.
鈥?/div>
CDMA Performance @ 1990 MHz, 26 Volts
IS鈥?7 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz 鈥?鈥?7 dBc @ 30 kHz BW
1.25 MHz 鈥?鈥?5 dBc @ 12.5 kHz BW
2.25 MHz 鈥?鈥?5 dBc @ 1 MHz BW
Output Power 鈥?15 Watts (Avg.)
Power Gain 鈥?11.7 dB
Efficiency 鈥?16%
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency, High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1990 MHz, 120 Watts (CW)
Output Power
鈥?/div>
S鈥揚arameter Characterization at High Bias Levels
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
MRF19120
MRF19120S
1990 MHz, 120 W, 26 V
LATERAL N鈥揅HANNEL
RF POWER MOSFETs
CASE 375D鈥?4, STYLE 1
NI鈥?230
MRF19120
CASE 375E鈥?3, STYLE 1
NI鈥?230S
MRF19120S
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
鈥?.5, +15
389
2.22
鈥?5 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.45
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF19120 MRF19120S
1
MRF19120S相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Bel Fuse Inc. [Fast Acting Radial Lead Micro Fuse Series]
-
英文版
N.CHANNEL MOS BROADBAND RF POWER FET
MA-COM
-
英文版
N-CHANNEL MOS BROADBAND RF POWER FET
-
英文版
RF Mosfet N-Channel 28V 50mA 400MHz 10.6dB ~ 14dB 5W 211-07,...
-
英文版
N-CHANNEL MOS BROADBAND RF POWER FET
MOTOROLA [...
-
英文版
N.CHANNEL MOS BROADBAND RF POWER FET
MACOM [Tyc...
-
英文版
N-CHANNEL MOS BROADBAND RF POWER FET
MA-COM
-
英文版
N-CHANNEL MOS BROADBAND RF POWER FETs
-
英文版
RF Mosfet N-Channel 28VDC 25mA 400MHz 16dB 15W 211-07, Style...
-
英文版
N-CHANNEL MOS BROADBAND RF POWER FET
MACOM [Tyc...
-
英文版
N-CHANNEL MOS BROADBAND RF POWER FETs
MOTOROLA [...
-
英文版
N-CHANNEL MOS BROADBAND RF POWER FET
MA-COM
-
英文版
N-CHANNEL MOS BROADBAND RF POWER FET
-
英文版
RF Mosfet N-Channel 28VDC 25mA 150MHz ~ 400MHz 7.7dB ~ 16dB ...
-
英文版
N-CHANNEL MOS BROADBAND RF POWER FET
MACOM [Tyc...
-
英文版
N-CHANNEL MOS BROADBAND RF POWER FET
MOTOROLA [...
-
英文版
Advanced Semiconductor [N-Channel Enhancement Mode VHF POWE...
ASI
-
英文版
N-CHANNEL MOS LINEAR RF POWER FET
MA-COM
-
英文版
N-CHANNEL MOS LINEAR RF POWER FET
-
英文版
RF Mosfet N-Channel 28V 250mA 30MHz ~ 150MHz 6dB ~ 15dB 150W...
1
2
3
4
5
6
7
8
9
10
11
12
