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MRF19090SR3 Datasheet

  • MRF19090SR3

  • RF POWER FIELD EFFECT TRANSISTORS

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19090/D
The RF MOSFET Line
RF Power Field Effect Transistors
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
Designed for Class AB PCN and PCS base station applications with
frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and
multicarrier amplifier applications.
鈥?/div>
Typical CDMA Performance: 1990 MHz, 26 Volts
IS鈥?7 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power 鈥?9 Watts
Power Gain 鈥?10 dB
Adjacent Channel Power 鈥?/div>
885 kHz: 鈥?7 dBc @ 30 kHz BW
1.25 MHz: 鈥?5 dBc @ 12.5 kHz BW
2.25 MHz: 鈥?5 dBc @ 1 MHz BW
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts (CW)
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF19090
MRF19090S
MRF19090SR3
1990 MHz, 90 W, 26 V
LATERAL N鈥揅HANNEL
RF POWER MOSFETs
CASE 465B鈥?3, STYLE 1
(NI鈥?80)
(MRF19090)
CASE 465C鈥?2, STYLE 1
(NI鈥?80S)
(MRF19090S)
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
> = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
+15, 鈥?.5
270
1.54
鈥?5 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.65
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF19090 MRF19090S MRF19090SR3
1

MRF19090SR3 產(chǎn)品屬性

  • 250

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 1.93GHz

  • 11.5dB

  • 26V

  • 10µA

  • -

  • 750mA

  • 90W

  • 65V

  • NI-880S

  • NI-880S

  • 帶卷 (TR)

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