MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF187/D
The RF MOSFET Line
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1.0 GHz. The high gain and broadband performance of
these devices make them ideal for large鈥搒ignal, common source amplifier
applications in 26 volt base station equipment.
鈥?/div>
Guaranteed Performance @ 880 MHz, 26 Volts
Output Power 鈥?85 Watts PEP
Power Gain 鈥?12 dB
Efficiency 鈥?30%
Intermodulation Distortion 鈥?鈥?8 dBc
鈥?/div>
100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, 880 MHz, 85 Watts CW
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch
Reel.
1.0 GHz, 85 W, 26 V
LATERAL N鈥揅HANNEL
BROADBAND
RF POWER MOSFETs
LIFETIME BUY
CASE 465鈥?6, STYLE 1
NI鈥?80
MRF187
CASE 465A鈥?6, STYLE 1
NI鈥?80S
MRF187SR3
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (R
GS
= 1 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ T
C
鈮?/div>
25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
T
stg
T
J
Value
65
65
鹵20
15
250
1.43
鈥?5 to +200
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.70
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF187 MRF187R3 MRF187SR3
1
LAST ORDER 31JUL04
LAST SHIP 31JAN05
RF Power Field Effect Transistors
MRF187
MRF187R3
MRF187SR3
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