鈥?/div>
Bottom Side Source Eliminates DC Isolators, Reducing Common
Mode Inductances
D
MRF182
MRF182S
30 W, 1.0 GHz
LATERAL N鈥揅HANNEL
BROADBAND
RF POWER MOSFETs
G
CASE 360B鈥?1, STYLE 1
(MRF182)
S
CASE 360C鈥?3, STYLE 1
(MRF182S)
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ TC = 70擄C
Derate above 70擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
鹵
20
74
0.57
鈥?65 to +150
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
1.75
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain鈥揝ource Breakdown Voltage
(VGS = 0, ID = 1.0
m
Adc)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate鈥揝ource Leakage Current
(VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
65
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1
1
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF182
1
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