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MRF18090AS Datasheet

  • MRF18090AS

  • 1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFE...

  • 176.71KB

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF18090A/D
The RF MOSFET Line
RF Power Field Effect Transistors
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
鈥?/div>
GSM and EDGE Performances, Full Frequency Band
Power Gain 鈥?13.5 dB (Typ) @ 90 Watts (CW)
Efficiency 鈥?52% (Typ) @ 90 Watts (CW)
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
MRF18090A
MRF18090AS
1.80 鈥?1.88 GHz, 90 W, 26 V
LATERAL N鈥揅HANNEL
RF POWER MOSFETS
CASE 465B鈥?3, STYLE 1
(NI鈥?80)
(MRF18090A)
CASE 465C鈥?2, STYLE 1
(NI鈥?80S)
(MRF18090AS)
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
+15, 鈥?.5
250
1.43
鈥?5 to +200
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.7
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA RF
漏
Motorola, Inc. 2002
DEVICE DATA
MRF18090A MRF18090AS
1

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