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MRF18085BR3 Datasheet

  • MRF18085BR3

  • RF Power Field Effect Transistors

  • 12頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF18085B/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for GSM and GSM EDGE base station applications with
frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
鈥?/div>
GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990
MHz)
Power Gain - 12.5 dB (Typ) @ 85 Watts CW
Efficiency - 50% (Typ) @ 85 Watts CW
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency, and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
@ f = 1930 MHz
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40碌鈥?Nominal.
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF18085BR3
MRF18085BLSR3
GSM/GSM EDGE
1.9 - 1.99 GHz, 85 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465 - 06, STYLE 1
NI - 780
MRF18085BR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CASE 465A - 06, STYLE 1
NI - 780S
MRF18085BLSR3
Value
65
- 0.5, +15
273
1.56
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value (1)
0.79
Unit
擄C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF18085BR3 MRF18085BLSR3
1

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