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MRF18030ALSR3 Datasheet

  • MRF18030ALSR3

  • RF Power Field Effect Transistors

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF18030A/D
The RF MOSFET Line
RF Power Field Effect Transistors MRF18030ALR3
N - Channel Enhancement - Mode Lateral MOSFETs
MRF18030ALSR3
Designed for GSM and EDGE base station applications with frequencies
from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. Specified for GSM 1805 - 1880 MHz.
鈥?/div>
Typical GSM Performance:
Power Gain - 14 dB (Typ) @ 30 Watts
Efficiency - 50% (Typ) @ 30 Watts
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Low Gold Plating Thickness on Leads, 40碌鈥?Nominal.
鈥?/div>
in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
1.8 - 1.88 GHz, 30 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF18030ALR3
Freescale Semiconductor, Inc...
CASE 465F - 04, STYLE 1
NI - 400S
MRF18030ALSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
83.3
0.48
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
2.1
Unit
擄C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 6
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF18030ALR3 MRF18030ALSR3
1

MRF18030ALSR3 產(chǎn)品屬性

  • 250

  • 分離式半導體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 1.81GHz

  • 14dB

  • 26V

  • 1µA

  • -

  • 250mA

  • 30W

  • 65V

  • NI-400S

  • NI-400S

  • 帶卷 (TR)

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