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MRF1535T1 Datasheet

  • MRF1535T1

  • RF Power Field Effect Transistors

  • 16頁(yè)

  • MOTOROLA   MOTOROLA

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Freescale Semiconductor
Technical Data
MRF1535T1
Rev. 6, 1/2005
RF Power Field Effect Transistors
N鈭扖hannel Enhancement鈭扢ode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large鈭抯ignal, common source amplifier applications in
12.5 volt mobile FM equipment.
鈥?/div>
Specified Performance @ 520 MHz, 12.5 Volts
Output Power 鈥?35 Watts
Power Gain 鈥?10.0 dB
Efficiency 鈥?50%
鈥?/div>
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈭扴ignal Impedance Parameters
鈥?/div>
Broadband鈭扚ull Power Across the Band: 135鈭?75 MHz
400鈭?70 MHz
450鈭?20 MHz
鈥?/div>
Broadband UHF/VHF Demonstration Amplifier Information Available
Upon Request
鈥?/div>
N Suffix Indicates Lead鈭扚ree Terminations
鈥?/div>
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF1535NT1
MRF1535FNT1
MRF1535T1
MRF1535FT1
520 MHz, 35 W, 12.5 V
LATERAL N鈭扖HANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264鈭?9, STYLE 1
TO鈭?72
PLASTIC
MRF1535T1(NT1)
Table 1. Maximum Ratings
Rating
Drain鈭扴ource Voltage
Gate鈭扴ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ T
C
= 25擄C
(1)
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
CASE 1264A鈭?2, STYLE 1
TO鈭?72 STRAIGHT LEAD
PLASTIC
MRF1535FT1(FNT1)
Value
鈭?.5,
+40
鹵
20
6
135
0.50
鈭?5
to +150
175
Unit
Vdc
Vdc
Adc
W
W/擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
0.90
Unit
擄C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22鈭扐113, IPC/JEDEC J鈭扴TD鈭?20
1. Calculated based on the formula P
D
=
TJ 鈥?TC
R
胃JC
Rating
1
Package Peak Temperature
260
Unit
擄C
NOTE
鈭?/div>
CAUTION
鈭?/div>
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
漏
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
1
RF Device Data
Freescale Semiconductor

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