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MRF1507T1 Datasheet

  • MRF1507T1

  • LATERAL NCHANNEL BROADBAND RF POWER MOSFET

  • 12頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1507/D
The RF MOSFET Line
RF Power Field Effect Transistor
The MRF1507 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large鈥搒ignal, common source
amplifier applications in 7.5 volt portable FM equipment.
鈥?/div>
Specified Performance @ 520 MHz, 7.5 Volts
Output Power 鈥?8 Watts
Power Gain 鈥?10 dB
Efficiency 鈥?65%
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal
D
Impedance Parameters
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
鈥?/div>
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
G
鈥?/div>
RF Power Plastic Surface Mount Package
鈥?/div>
Available in Tape and Reel by Adding T1 Suffix to
Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
S
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
MRF1507
MRF1507T1
8 W, 520 MHz, 7.5 V
LATERAL N鈥揅HANNEL
BROADBAND
RF POWER MOSFET
CASE 466鈥?2, STYLE 1
(PLD 1.5)
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage (1)
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
ID
PD
Tstg
Tj
Value
25
鹵
20
4
62.5
0.50
鈥?65 to +150
150
Unit
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Not designed for 12.5 volt applications.
Symbol
R
胃JC
Max
2
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
漏
Motorola, Inc. 1998
DEVICE DATA
MRF1507 MRF1507T1
1

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