鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF10005
5.0 W, 960 鈥?1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 336E鈥?2, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous (1)
Total Device Dissipation @ TA = 25擄C (1)
Derate above 25擄C
Storage Temperature Range
Junction Temperature
Symbol
VCES
VCBO
VEBO
IC
PD
Tstg
TJ
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
R
胃JC
Value
55
55
3.5
1.25
25
143
鈥?65 to + 200
200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Max
7.0
Unit
擄C/W
NOTES:
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF10005
1