MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW63/D
One Watt Darlington Transistors
PNP Silicon
COLLECTOR 3
MPSW63
MPSW64 *
*Motorola Preferred Device
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPSW63
MPSW64
鈥?0
鈥?0
鈥?0
鈥?00
1.0
8.0
2.5
20
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?5, STYLE 1
TO鈥?2 (TO鈥?26AE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 鈥?00
碌Adc,
VBE = 0)
Collector Cutoff Current
(VCB = 鈥?0 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 鈥?0 Vdc, IC = 0)
V(BR)CES
ICBO
IEBO
鈥?0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?00
鈥?00
Vdc
nAdc
nAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
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1
2
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