MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW51/D
One Watt High Current Transistors
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPSW51
MPSW51A*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
MPSW51
MPSW51A
MPSW51
MPSW51A
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
鈥?0
鈥?0
鈥?0
鈥?0
鈥?.0
鈥?000
1.0
8.0
2.5
20
鈥?55 to +150
Unit
Vdc
Vdc
CASE 29鈥?5, STYLE 1
TO鈥?2 (TO鈥?26AE)
Vdc
mAdc
Watts
mW/擄C
Watts
mW/擄C
擄C
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 鈥?.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 鈥?00
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 鈥?00
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 鈥?0 Vdc, IE = 0)
(VCB = 鈥?0 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 鈥?.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
MPSW51
MPSW51A
IEBO
V(BR)CEO
MPSW51
MPSW51A
V(BR)CBO
MPSW51
MPSW51A
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?.1
鈥?.1
鈥?.1
碌A(chǔ)dc
鈥?0
鈥?0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
碌A(chǔ)dc
鈥?0
鈥?0
鈥?/div>
鈥?/div>
Vdc
Vdc
v
300
m
s, Duty Cycle
v
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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