MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW10/D
One Watt High Voltage Transistor
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPSW10
1
2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
300
300
6.0
500
1.0
8.0
2.5
20
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/擄C
Watts
mW/擄C
擄C
CASE 29鈥?5, STYLE 1
TO鈥?2 (TO鈥?26AE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector鈥揃ase Breakdown Voltage
(IC = 100
碌A(chǔ)dc,
IE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 100
碌A(chǔ)dc,
IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
300
300
6.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.2
0.1
Vdc
Vdc
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
v
300
m
s, Duty Cycle
v
2.0%.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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