MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW05/D
One Watt Amplifier Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPSW05
MPSW06*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPSW05
60
60
4.0
500
1.0
8.0
2.5
20
鈥?55 to +150
MPSW06
80
80
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?5, STYLE 1
TO鈥?2 (TO鈥?26AE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
MPSW05
MPSW06
ICBO
MPSW05
MPSW06
IEBO
鈥?/div>
鈥?/div>
鈥?/div>
0.1
0.1
0.1
碌A(chǔ)dc
V(BR)CEO
MPSW05
MPSW06
V(BR)EBO
ICES
鈥?/div>
鈥?/div>
0.5
0.5
碌A(chǔ)dc
60
80
4.0
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
碌A(chǔ)dc
Vdc
v
300
m
s, Duty Cycle
v
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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