MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSH17/D
CATV Transistor
NPN Silicon
COLLECTOR
3
1
BASE
2
EMITTER
MPSH17
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
PD
TJ, Tstg
Value
15
20
3.0
350
2.81
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mW
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 2
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
Symbol
R
q
JA
Max
357
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
15
20
3.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
Vdc
Vdc
Vdc
nAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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英文版
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