鈥?/div>
omponents
21201 Itasca Street Chatsworth
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MPSA92
Through Hole Package
Operating & Storage Temperature: -55擄C to +150擄C
Marking Code: A92
Pin Configuration
Bottom View
PNP Silicon High
Voltage Transistor
TO-92
A
E
C
B
E
Electrical Characteristics @ 25擄C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=-1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-100碌A(chǔ)dc, I
E
=0)
Emitter -Base Breakdown Voltage
(I
E
=-10碌A(chǔ)dc, I
C
=0)
Emitt er Cutoff Current
(V
EB
=-3.0Vdc, I
C
=0)
Collector Cutoff Current
(V
CB
=-200Vdc, I
E
=0)
DC Current Gain*
(I
C
=-1.0mAdc, V
CE
=-10Vdc)
(I
C
=-10mAdc, V
CE
=-10Vdc)
(I
C
=-50mAdc, V
CE
=-10Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-20mAdc, I
B
=-2.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=-20mAdc, I
B
=-2.0mAdc)
Min
-300
-300
-5.0
-0.25
-0.25
Max
Units
Vdc
Vdc
Vdc
uA dc
uAdc
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
EBO
I
CBO
B
ON CHARACTERISTICS
h
FE
25
80
25
250
C
V
CE(sat)
V
BE(sat)
-0.5
-0.9
Vdc
Vdc
D
SMALL-SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
(I
C
=-10mAdc, V
CE
=-5Vdc, f=30MHz)
C
cb
Coll ector -Base Capacitance
(V
CB
=-20Vdc, I
E
=0, f=1 .0MHz)
*Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
f
T
50
6.0
MHz
pF
G
MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
IC
R
q
JA
R
q
JC
PD
PD
Characteristic
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
MPSA92
鈥?00
鈥?00
鈥?.0
鈥?00
200
83.3
625
5.0
1.5
12
Unit
Vdc
Vdc
Vdc
mAdc
擄C/W
擄C/W
mW
mW/擄C
Watts
mW/擄C
DIMENSIONS
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
MAX
.185
.185
---
.020
.145
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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