MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSA05/D
Amplifier Transistors
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
COLLECTOR
3
NPN
MPSA05
MPSA06*
PNP
MPSA55
MPSA56*
Voltage and current are negative
for PNP transistors
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPSA05
MPSA55
60
60
4.0
500
625
5.0
1.5
12
鈥?55 to +150
MPSA06
MPSA56
80
80
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA(1)
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 100
碌A(chǔ)dc,
IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
MPSA05, MPSA55
MPSA06, MPSA56
V(BR)CEO
MPSA05, MPSA55
MPSA06, MPSA56
V(BR)EBO
ICES
ICBO
鈥?/div>
鈥?/div>
0.1
0.1
60
80
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.1
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
Vdc
1. R
q
JA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
v
v
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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