MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSA18/D
Low Noise Transistor
NPN Silicon
MPSA18
Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
45
45
6.5
200
625
5.0
1.5
12
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA(1)
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(2)
(IC = 10 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 10
碌A(chǔ)dc,
IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
1. R
胃JA
is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
鈮?/div>
300
m
s, Duty Cycle
鈮?/div>
2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
45
45
6.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
鈥?/div>
鈥?/div>
鈥?/div>
50
Vdc
Vdc
Vdc
nAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
MPSA18 產(chǎn)品屬性
5,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
200mA
45V
300mV @ 5mA，50mA
-
500 @ 10mA，5V
625mW
160MHz
通孔
TO-226-3、TO-92-3 標準主體
TO-92-3
散裝
MPSA18OS
MPSA18相關(guān)型號PDF文件下載
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