MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6726/D
One Watt Amplifier Transistor
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPS6726
MPS6727
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
MPS6726
MPS6727
Collector 鈥?Base Voltage
MPS6726
MPS6727
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
VEBO
IC
PD
PD
TJ, Tstg
VCBO
鈥?0
鈥?0
鈥?.0
鈥?.0
1.0
8.0
2.5
20
鈥?55 to +150
Vdc
Adc
Watts
mW/擄C
Watts
mW/擄C
擄C
Symbol
VCEO
鈥?0
鈥?0
Vdc
Value
Unit
Vdc
1
2
3
CASE 29鈥?5, STYLE 1
TO鈥?2 (TO鈥?26AE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 鈥?0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 鈥?00
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 鈥?00
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 鈥?0 Vdc, IE = 0)
(VCB = 鈥?0 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 鈥?.0 Vdc, IC = 0)
MPS6726
MPS6727
IEBO
V(BR)CEO
MPS6726
MPS6727
V(BR)CBO
MPS6726
MPS6727
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?.1
鈥?.1
鈥?.1
碌A(chǔ)dc
鈥?0
鈥?0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
碌A(chǔ)dc
鈥?0
鈥?0
鈥?/div>
鈥?/div>
Vdc
Vdc
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
MPS6727 產(chǎn)品屬性
5,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
1A
40V
500mV @ 100mA，1A
-
50 @ 1A，1V
1W
-
通孔
TO-226-3、TO-92-3 長體
TO-92
散裝
MPS6727OS
MPS6727相關(guān)型號PDF文件下載
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