MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6601/D
Amplifier Transistors
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
COLLECTOR
3
NPN
MPS6601
MPS6602*
PNP
MPS6651
MPS6652*
Voltage and current are negative
for PNP transistors
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
MPS6601/6651
MPS6602/6652
Collector 鈥?Base Voltage
MPS6601/6651
MPS6602/6652
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
VEBO
IC
PD
PD
TJ, Tstg
VCBO
25
30
4.0
1000
625
5.0
1.5
12
鈥?55 to
+150
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
Symbol
VCEO
25
40
Vdc
Value
Unit
Vdc
1
2
3
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA(1)
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
碌A(chǔ)dc,
IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
碌A(chǔ)dc,
IC = 0)
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0)
MPS6601/6651
MPS6602/6652
ICBO
MPS6601/6651
MPS6602/6652
鈥?/div>
鈥?/div>
0.1
0.1
V(BR)CEO
MPS6601/6651
MPS6602/6652
V(BR)CBO
MPS6601/6651
MPS6602/6652
V(BR)EBO
ICES
鈥?/div>
鈥?/div>
0.1
0.1
碌A(chǔ)dc
25
40
4.0
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
碌A(chǔ)dc
25
40
鈥?/div>
鈥?/div>
Vdc
Vdc
1. R
q
JA is measured with the device soldered into a typical printed circuit board.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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