MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS650/D
Amplifier Transistors
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
COLLECTOR
3
NPN
MPS650
MPS651 *
PNP
MPS750
MPS751 *
Voltage and current are
negative for PNP transistors
*Motorola Preferred Devices
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Power Dissipation @ TA = 25擄C
Derate above 25擄C
Total Power Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCE
VCB
VEB
IC
PD
PD
TJ, Tstg
MPS650
MPS750
40
60
5.0
2.0
625
5.0
1.5
12
鈥?55 to +150
MPS651
MPS751
60
80
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/擄C
Watt
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
碌A(chǔ)dc,
IE = 0 )
Emitter 鈥?Base Breakdown Voltage
(IC = 0, IE = 10
碌A(chǔ)dc)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
1. Pulse Test: Pulse Width
鈮?/div>
300
m
s, Duty Cycle = 2.0%.
MPS650, MPS750
MPS651, MPS751
IEBO
V(BR)CEO
MPS650, MPS750
MPS651, MPS751
V(BR)CBO
MPS650, MPS750
MPS651, MPS751
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
0.1
0.1
0.1
碌A(chǔ)dc
60
80
5.0
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
碌A(chǔ)dc
40
60
鈥?/div>
鈥?/div>
Vdc
Vdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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