MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS4250/D
Transistor
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPS4250
1
2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
鈥?0
鈥?0
鈥?0
鈥?.0
鈥?/div>
625
5.0
1.5
12
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
mW
mW/擄C
擄C
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 鈥?.0 mA)
Collector 鈥?Emitter Sustaining Voltage(1)
(IC = 鈥?.0)
Collector 鈥?Base Breakdown Voltage
(IC = 鈥?0
m
A)
Emitter 鈥?Base Breakdown Voltage
(IE = 鈥?0
m
A)
Collector Cutoff Current
(VCB = 鈥?0 V)
(VCB = 鈥?0 V, TA = 65擄C)
Emitter Cutoff Current
(VEB = 鈥?.0 V)
1. Pulse Test: Pulse Width = 300
m
s; Duty Cycle = 2.0%.
V(BR)CES
V(BR)CEO(sus)
V(BR)CBO
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
IEBO
鈥?/div>
鈥?0
鈥?.0
鈥?0
nA
m
A
nA
鈥?0
鈥?0
鈥?0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
Vdc
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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