MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS4124/D
Amplifier Transistor
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPS4124
1
2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Power Dissipation @ TA = 25擄C
Derate above 25擄C
Total Power Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCE
VCB
VEB
IC
PD
PD
TJ, Tstg
Value
25
30
5.0
200
625
5.0
1.5
12
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
W
mW/擄C
擄C
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 10
m
A, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IC = 0, IE = 10
m
A)
Collector Cutoff Current
(VCB = 20 V, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 V, IC = 0)
V(BR)CEO
25
V(BR)CBO
30
V(BR)EBO
5.0
ICBO
鈥?/div>
IEBO
鈥?/div>
50
50
nAdc
鈥?/div>
nAdc
鈥?/div>
Vdc
鈥?/div>
Vdc
Vdc
(Replaces MPS4123/D)
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
MPS4124 產品屬性
5,000
分離式半導體產品
晶體管(BJT) - 單路
-
NPN
200mA
25V
300mV @ 5mA，50mA
-
120 @ 2mA，1V
625mW
170MHz
通孔
TO-226-3、TO-92-3 標準主體
TO-92-3
散裝
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