MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS4123/D
Amplifier Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPS4123
MPS4124
1
2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Power Dissipation @ TA = 25擄C
Derate above 25擄C
Total Power Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCE
VCB
VEB
IC
PD
PD
TJ, Tstg
MPS4123
30
40
5.0
200
625
5.0
1.5
12
鈥?55 to +150
MPS4124
25
30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
W
mW/擄C
擄C
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 10
m
A, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IC = 0, IE = 10
m
A)
Collector Cutoff Current
(VCB = 20 V, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 V, IC = 0)
MPS4123
MPS4124
MPS4123
MPS4124
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
30
25
40
30
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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