MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS3904/D
General Purpose Transistor
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPS3904
1
2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Power Dissipation @ TA = 60擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
PD
TJ, Tstg
Value
40
60
6.0
100
625
5.0
450
1.5
12
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
mW
Watts
mW/擄C
擄C
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 10
碌A(chǔ)dc,
IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
碌A(chǔ)dc,
IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VEB(off) = 3.0 Vdc)
Base Cutoff Current
(VCE = 30 Vdc, VEB(off) = 3.0 Vdc)
1. Pulse Test: Pulse Width
鈮?/div>
300
m
s, Duty Cycle
鈮?/div>
2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
IBL
40
60
6.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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