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MMG3013NT1 Datasheet

  • MMG3013NT1

  • Heterojunction Bipolar Transistor Technology (InGaP HBT)

  • 432.96KB

  • 12頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MMG3013NT1
Rev. 2, 8/2005
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3013NT1 is a General Purpose Amplifier that is internally
input matched and internally output matched. It is designed for a broad
range of Class A, small - signal, high linearity, general purpose applica-
tions. It is suitable for applications with frequencies from 0 to 6000 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small -signal RF.
Features
鈥?/div>
Frequency: 0 -6000 MHz
鈥?/div>
P1dB: 20.5 dBm @ 900 MHz
鈥?/div>
Small-Signal Gain: 20 dB @ 900 MHz
鈥?/div>
Third Order Output Intercept Point: 36 dBm @ 900 MHz
鈥?/div>
Single 5 Volt Supply
鈥?/div>
Internally Matched to 50 Ohms
鈥?/div>
Low Cost SOT -89 Surface Mount Package
鈥?/div>
Pb -Free and RoHS Compliant
鈥?/div>
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MMG3013NT1
0 -6000 MHz, 20 dB
20.5 dBm
InGaP HBT
12
3
CASE 1514-01, STYLE 1
SOT-89
PLASTIC
Table 1. Typical Performance
(1)
Characteristic
Small-Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @1dB
Compression
Third Order Output
Intercept Point
Symbol
G
p
IRL
ORL
P1db
IP3
900
MHz
20
-17
-11
20.5
36
2140
MHz
17
-19
-9
20.5
34
3500
MHz
14.5
-15
-12
19
32
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
(2)
Supply Current
(2)
RF Input Power
Storage Temperature Range
Junction Temperature
(3)
Symbol
V
CC
I
CC
P
in
T
stg
T
J
Value
7
300
12
-65 to +150
150
Unit
V
mA
dBm
擄C
擄C
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150擄C.
1. V
CC
= 5 Vdc, T
C
= 25擄C, 50 ohm system
Table 3. Thermal Characteristics
(V
CC
= 5 Vdc, I
CC
= 90 mA, T
C
= 25擄C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
(4)
42
Unit
擄C/W
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
錚?/div>
Freescale Semiconductor, Inc., 2005. All rights reserved.
MMG3013NT1
1
RF Device Data
Freescale Semiconductor

MMG3013NT1 產(chǎn)品屬性

  • RF Devices Discontinuation 01/Jul/2010

  • 1,000

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 0Hz ~ 6GHz

  • -

  • 20dB

  • -

  • 手機，PCS，PHS，WLL

  • 5V

  • 90mA

  • -

  • TO-243AA

  • 帶卷 (TR)

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