MOC70P1 / MOC70P2 / MOC70P3
PHOTOTRANSISTOR OPTICAL
INTERRUPTER SWITCH
PACKAGE DIMENSIONS
0.510 [12.95]
DESCRIPTION
The MOC70PX consists of an infrared
light emitting diode coupled to an
NPN silicon phototransistor packaged
into an injection molded housing. The
housing is designed for wide gap, non
contact sensing.
0.250 [6.35]
0.506 [12.85]
0.200 [5.08] NOM
0.153 [3.89] 2X
C
L
0.080 [2.03] NOM
FEATURES
0.270 [6.86]
鈥?No contact sensing
鈥?5 mm gap
SCHEMATIC
1
4
0.050 [1.27]
0.140 [3.56]
0.105 [2.67]
0.380 [9.65]
PIN 2 CATHODE
PIN 3 (COLLECTOR)
SEATING PLANE
0.020 [0.51] 4 X
鈥?.040鈥?aperture
鈥?Low profile
鈥?PCB mount
鈥?Transistor output
2
3
0.100 [2.54]
NOTES
PIN 1 (ANODE)
PIN 4 (EMITTER)
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of 鹵 .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1. Derate power dissipation linearly, on each component, 1.67
mW/擄C above 25擄C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as
cleaning agents.
4. Soldering iron tip
1/16鈥?/div>
(1.6mm) from housing.
5. As long as leads are not under any stress or spring tension.
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
EMITTER
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
SENSOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
(1)
(2,3,4,5)
(2,3,5)
(T
A
= 25擄C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
V
CEO
V
ECO
I
C
P
D
Rating
-55 to +100
-55 to +100
240 for 5 sec
260 for 10 sec
50
6
100
30
4.5
20
150
Units
擄C
擄C
擄C
擄C
mA
V
mW
V
V
mA
mW
Soldering Temperature (Flow)
錚?/div>
2001 Fairchild Semiconductor Corporation
DS300009
4/25/01
1 OF 5
www.fairchildsemi.com
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