SMALL OUTLINE OPTOCOUPLERS
DARLINGTON OUTPUT
MOC223-M
DESCRIPTION
The MOC223-M consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic
silicon photodarlington detector, in a surface mountable, small outline, plastic package. It is ideally
suited for high density applications, and eliminates the need for through - the - board mounting.
FEATURES
鈥?U.L. Recognized (File #E90700, Volume 2)
鈥?VDE Recognized (File #136616) (add option 鈥淰鈥?for VDE approval, i.e, MOC223V-M)
鈥?Industry Standard SOIC-8 Surface Mountable Package with 0.050" lead spacing
鈥?High Current Transfer Ratio of 500% Minimum at I
F
= 1 mA
鈥?Standard SOIC-8 Footprint, with 0.050" Lead Spacing
鈥?Compatible with Dual Wave, Vapor Phase and IR Re鏗俹w Soldering
鈥?High Input-Output Isolation Voltage of 2500 V
AC(rms)
Guaranteed
ANODE 1
8 N/C
CATHODE 2
7 BASE
N/C 3
6 COLLECTOR
APPLICATIONS
鈥?Low Power Logic Circuits
鈥?Interfacing and coupling systems of different potentials and impedances
鈥?Telecommunications equipment
鈥?Portable electronics
鈥?Solid state relays
N/C 4
5 EMITTER
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25擄C Unless otherwise speci鏗乪d)
Rating
EMITTER
Forward Current - Continuous
Forward Current - Peak (PW = 100 碌s, 120 pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector-Base Voltage
Collector Current-Continuous
Detector Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
TOTAL DEVICE
Input-Output Isolation Voltage
(f = 60 Hz, t = 1 min.)
Total Device Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
Ambient Operating Temperature Range
Storage Temperature Range
Symbol
I
F
I
F
(pk)
V
R
P
D
V
CEO
V
ECO
V
CBO
I
C
P
D
Value
60
1.0
6.0
90
0.8
30
7.0
70
150
150
1.76
Unit
mA
A
V
mW
mW/擄C
V
V
V
mA
mW
mW/擄C
V
ISO
P
D
T
A
T
stg
2500
250
2.94
-40 to +100
-40 to +150
Vac(rms)
mW
mW/擄C
擄C
擄C
漏 2002 Fairchild Semiconductor Corporation
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7/17/02
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