MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMPQ3725/D
Quad Core Driver
Transistor
NPN Silicon
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
MMPQ3725
Motorola Preferred Device
16
1
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Emitter Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCES
VEB
IC
TJ, Tstg
Value
40
60
5.0
1.0
鈥?5 to +150
Four
Transistors
Equal Power
1.4
11.2
2.5
2.0
鈥?5 to +150
Watts
mW/擄C
Watts
mW/擄C
擄C
Unit
Vdc
Vdc
Vdc
Adc
擄C
CASE 751B鈥?5, STYLE 4
SO鈥?6
Each
Transistor
Total Power Dissipation @ TA = 25擄C
Derate above 25擄C
Power Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
PD
PD
TJ, Tstg
0.6
4.8
1.0
8.0
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, VBE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
1. Pulse Test: Pulse Width
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
40
60
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.5
Vdc
Vdc
Vdc
m
Adc
v
300
m
s; Duty Cycle
v
2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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TRANS 4NPN 40V 0.2A 16SOIC
1
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4
