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MMG3003NT1 Datasheet

  • MMG3003NT1

  • Heterojunction Bipolar Transistor Technology (InGaP HBT)

  • 16頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MMG3003NT1
Rev. 4, 5/2006
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3003NT1 is a General Purpose Amplifier that is internally
input matched and internally output prematched. It is designed for a broad
range of Class A, small - signal, high linearity, general purpose applica-
tions. It is suitable for applications with frequencies from 40 to 3600 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small - signal RF.
Features
鈥?/div>
Frequency: 40 - 3600 MHz
鈥?/div>
P1dB: 24 dBm @ 900 MHz
鈥?/div>
Small - Signal Gain: 20 dB @ 900 MHz
鈥?/div>
Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
鈥?/div>
Single Voltage Supply
鈥?/div>
Internally Matched to 50 Ohms
鈥?/div>
Low Cost SOT - 89 Surface Mount Package
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MMG3003NT1
40 - 3600 MHz, 20 dB
24 dBm
InGaP HBT
12
3
CASE 1514 - 01, STYLE 1
SOT - 89
PLASTIC
Table 1. Typical Performance
(1)
Characteristic
Small - Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @1dB
Compression
Third Order Output
Intercept Point
Symbol
G
p
IRL
ORL
P1db
IP3
900
MHz
20
- 15
- 9.3
24
40.5
2140
MHz
16.9
- 14.1
鈭?4.5
23.3
40
3500
MHz
12
- 11.2
- 10.2
20.5
37
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
(2)
Supply Current
(2)
RF Input Power
Storage Temperature Range
Junction Temperature
(3)
Symbol
V
CC
I
CC
P
in
T
stg
T
J
Value
7
400
15
- 65 to +150
150
Unit
V
mA
dBm
擄C
擄C
2. Voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150擄C.
1. V
CC
= 6.2 Vdc, T
C
= 25擄C, 50 ohm system
Table 3. Thermal Characteristics
(V
CC
= 6.2 Vdc, I
CC
= 180 mA, T
C
= 25擄C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
(4)
31.6
Unit
擄C/W
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MMG3003NT1
6-1
Freescale Semiconductor
RF Product Device Data

MMG3003NT1 產(chǎn)品屬性

  • 1,000

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 40MHz ~ 3.6GHz

  • 24dBm（251.2mW）

  • 20dB

  • 4dB

  • 手機，PCS，PHS，WLL

  • 6.2V

  • 180mA

  • 900MHz

  • TO-243AA

  • 帶卷 (TR)

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