鈥?/div>
Marking: 3P303
MOSFET MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
(Notes 1. & 2.)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 MW)
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current
鈥?Continuous @ TA = 25擄C
鈥?Continuous @ TA = 100擄C
鈥?Single Pulse (tp
v
10
ms)
Total Power Dissipation @ TA = 25擄C
(Note 3.)
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
Value
30
30
"20
3.5
2.25
12
2.0
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
1
L
Y
WW
= Location Code
= Year
= Work Week
8
SO鈥?
CASE 751
STYLE 18
6N303
LYWW
http://onsemi.com
3 AMPERES
30 VOLTS
RDS(on) = 100 mW
VF = 0.42 Volts
P鈥揅hannel
D
G
S
MARKING
DIAGRAM
PIN ASSIGNMENT
Anode
Anode
Source
Gate
1
2
3
4
8
7
6
5
Cathode
Cathode
Drain
Drain
Single Pulse Drain鈥搕o鈥揝ource Avalanche
EAS
375
mJ
Energy 鈥?STARTING TJ = 25擄C
VDD = 30 Vdc, VGS = 10 Vdc, VDS = 20 Vdc,
IL = 9.0 Apk, L = 10 mH, RG = 25
W
1. Negative sign for P鈥揷hannel device omitted for clarity.
2. Pulse Test: Pulse Width
鈮?/div>
250
碌s,
Duty Cycle
鈮?/div>
2.0%.
3. Mounted on 2鈥?square FR4 board (1鈥?sq. 2 oz. Cu 0.06鈥?thick single sided),
10 sec. max.
Top View
ORDERING INFORMATION
Device
MMDFS3P303R2
Package
SO鈥?
Shipping
2500 Tape & Reel
漏
Semiconductor Components Industries, LLC, 2000
1
November, 2000 鈥?Rev. 2
Publication Order Number:
MMDFS3P303/D
next